savantic semiconductor product specification silicon npn power transistors tip150/151/152 d escription with to-220c package darlington applications for use in automotive ignition,switching and motor control applications pinning pin description 1 base 2 collector;connected to mounting base 3 emitter absolute maximum ratings(tc=25) symbol parameter conditions value unit tip150 300 TIP151 350 v cbo collector-base voltage tip152 open emitter 400 v tip150 300 TIP151 350 v ceo collector-emitter voltage tip152 open base 400 v v ebo emitter-base voltage open collector 8 v i c collector current-dc 7 a i cm collector current-pulse 10 a i b base current-dc 1.5 a p c collector power dissipation t c =25 80 w t j junction temperature 150 t stg storage temperature -65~150 thermal characteristics symbol parameter value unit r th j-c thermal resistance junction to case 1.56 /w
savantic semiconductor product specification 2 silicon npn power transistors tip150/151/152 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit tip150 300 TIP151 350 v (br)ceo collector-emitter breakdown voltage tip152 i c =10ma, i b =0 400 v tip150 300 TIP151 350 v (br)cbo collector-base breakdown voltage tip152 i c =1ma, i e =0 400 v v ce (sat) -1 collector-emitter saturation voltage i c =1a ,i b =10ma 1.5 v v ce ( sat) -2 collector-emitter saturation voltage i c =2a ,i b =100ma 1.5 v v ce (sat) -3 collector-emitter saturation voltage i c =5a ,i b =250ma 2.0 v v be (sat) -1 base-emitter saturation voltage i c =2a ,i b =100ma 2.2 v v be (sat) -2 base-emitter saturation voltage i c =5a ,i b =250ma 2.3 v tip150 v ce =300v, i b =0 TIP151 v ce =350v, i b =0 i ceo collector cut-off current tip152 v ce =400v, i b =0 250 a i ebo emitter cut-off current v eb =8v; i c =0 15 ma h fe-1 dc current gain i c =2.5a ; v ce =5v 150 h fe-2 dc current gain i c =5a ; v ce =5v 50 h fe-3 dc current gain i c =7a ; v ce =5v 15 v f diode forward voltage i f =7a 3.5 v c ob output capacitance i e =0 ; v cb =10v;f=1mhz 150 pf switching times t d delay time 0.03 s t r rise time 0.18 s t s storage time 3.5 s t f fall time v cc =250v; i c =5a i b1 =-i b2 =250ma t p =20s;duty cycle c 2.0% 1.6 s
savantic semiconductor product specification 3 silicon npn power transistors tip150/151/152 package outline fig.2 outline dimensions (unindicated tolerance: 0.1mm)
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